Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

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It really is the book to have on SiC, and because of its breadth as well as depth, would be a good supplement to solid - state physics or electronics books, device design or SPICE modeling, or to provide a solid foundation for circuit design with SiC devices.

Fundamentals of Silicon Carbide Technology | Wiley Online Books

Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than papers in international journals and has presented more than 50 invited talks at international conferences. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over technical papers and conference presentations.